Growth and characterization of epitaxial LuNi2B2C thin films on MgO single crystals

Abstract

Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the precise control of the deposition rate, a biaxial texture is favored within a broad range of the deposition temperature. The full epitaxial relationship between the borocarbide film, the \luo interface layer and the substrate is (110)[001]MgO II (110)[001]Lu2O3 II (001)[100]LuNi2B2C. A very sharp in--plane alignment of about 1\textdegree and an out--of--plane order of about 2.5\textdegree was achieved in the \luni layer. However, a systematic study using different deposition temperatures shows that the temperature is crucial for phase formation and appealing superconducting properties. Applying optimized deposition conditions, critical temperatures of up to 15.8 K and steep superconducting transitions of about 0.3 K are reproducibly obtained. We further analyzed the upper critical field Hc2 of one film deposited under optimized conditions. It was resistively measured along the [001] direction and fitted with a power law. The value of Hc2(0) = 9.82 T obtained from that fit is in very good agreement with single crystal data and the power exponent describing the positive curvature for small external magnetic fields of about 0.19 indicates a relatively low intraband scattering in the films.