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arXiv · 1002.4934

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

B. C. Johnson·J. C. McCallum·L. H. Willems van Beveren·E. Gauja
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Abstract

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.

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B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren, E. Gauja. 2010-02-26. Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport. https://doi.org/10.1016/j.tsf.2009.09.152

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