A Memadmittance Systems Model for Thin Film Memory Materials

Blaise Mouttet

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arXiv · 1003.2842

A Memadmittance Systems Model for Thin Film Memory Materials

Blaise Mouttet

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Abstract

In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance switching behavior of TiO(2-x) thin films. However, a variety of other thin film materials exhibiting memory resistance effects have also been found to exhibit a memory capacitance effect. This paper proposes a memadmittance (memory admittance) systems model which attempts to consolidate the memory capacitance effects with the memristor model. The model produces equations relating the cross-sectional area of conductive bridges in resistive switching films to shifts in capacitance.

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Blaise Mouttet. 2010-03-15. A Memadmittance Systems Model for Thin Film Memory Materials. https://arxiv.org/abs/1003.2842

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