arXiv subjects

Blaise Mouttet

Publications and source records attributed to Blaise Mouttet.

7 recordsLinked to original sources

arXiv2012

Memresistors and non-memristive zero-crossing hysteresis curves

It has been erroneously asserted by the circuit theorist Leon Chua that all zero-crossing pinched hysteresis curves define memristors. This claim has been used by Stan Williams of HPLabs to assert that all forms of RRAM and phase change memory are memristors. This paper demonstrates several examples of dynamic systems which fall outside of the constraints of memristive systems and yet also produce the same type of zero-crossing hysteresis curves claimed as a fingerprint for a memristor. This establishes that zero-crossing hysteresis serves as insufficient evidence for a memristor. Keywords- nonlinear dynamic systems, memresistor, phase change memory, RRAM, ReRAM

cond-mat.mes-hall↗

arXiv2011

Dynamic Systems Model for Ionic Mem-Resistors based on Harmonic Oscillation

Memristive system models have previously been proposed to describe ionic memory resistors. However, these models neglect the mass of ions and repulsive forces between ions and are not well formulated in terms of semiconductor and ionic physics. This article proposes an alternative dynamic systems model in which the system state is derived from a second order differential equation in the form of a driven damped harmonic oscillator. Application is made to Schottky and tunneling barriers. Keywords- mem-resistor, non-linear dynamic systems

cond-mat.mes-hall↗

arXiv2011

Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors

A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM

cond-mat.mes-hall↗

arXiv2011

Dynamic Systems Model for Filamentary Mem-Resistors

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a dynamic Schottky barrier (associated with the electron depletion width surrounding the filament-electrode gap). A general model is formulated which may be applicable to many different forms of memory resistor materials. The frequency response of the model is briefly discussed. Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky junction, tunneling junction

cond-mat.mes-hall↗

arXiv2010

Memristive Systems Analysis of 3-Terminal Devices

Memristive systems were proposed in 1976 by Leon Chua and Sung Mo Kang as a model for 2-terminal passive nonlinear dynamical systems which exhibit memory effects. Such systems were originally shown to be relevant to the modeling of action potentials in neurons in regards to the Hodgkin-Huxley model and, more recently, to the modeling of thin film materials such as TiO2-x proposed for non-volatile resistive memory. However, over the past 50 years a variety of 3-terminal non-passive dynamical devices have also been shown to exhibit memory effects similar to that predicted by the memristive system model. This article extends the original memristive systems framework to incorporate 3-terminal, non-passive devices and explains the applicability of such dynamic systems models to 1) the Widrow-Hoff memistor, 2) floating gate memory cells, and 3) nano-ionic FETs. Keywords-memristive systems, memistor, transconductance, synaptic transistor, non-linear dynamic systems

cond-mat.mes-hall↗

arXiv2010

Memristive Transfer Matrices

An electrical analysis is performed for a memristor crossbar array integrated with operational amplifiers including the effects of parasitic or contact resistances. It is shown that the memristor crossbar array can act as a transfer matrix for a multiple input-multiple output signal processing system. Special cases of the transfer matrix are described related to reconfigurable analog filters, waveform generators, analog computing, and pattern similarity. Keywords: transfer matrix, memristor, analog electronics, crossbar, operational amplifier, reconfigurable electronics

physics.ins-det↗

arXiv2010

A Memadmittance Systems Model for Thin Film Memory Materials

In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance switching behavior of TiO(2-x) thin films. However, a variety of other thin film materials exhibiting memory resistance effects have also been found to exhibit a memory capacitance effect. This paper proposes a memadmittance (memory admittance) systems model which attempts to consolidate the memory capacitance effects with the memristor model. The model produces equations relating the cross-sectional area of conductive bridges in resistive switching films to shifts in capacitance.

cond-mat.mes-hall↗