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arXiv · 1003.3073

Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3

Jian Liu·M. Kareev·B. Gray·J. W. Kim·P. Ryan·B. Dabrowski·J. W. Freeland·J. Chakhalian
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Abstract

We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.

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Jian Liu, M. Kareev, B. Gray, J. W. Kim, P. Ryan, B. Dabrowski, J. W. Freeland, J. Chakhalian. 2010-03-17. Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3. https://doi.org/10.1063/1.3451462

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