Analytic model for the surface potential and drain current in negative capacitance field-effect transistors

David Jimenez; Enrique Miranda; Andres Godoy

doi:10.1109/ted.2010.2062188

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arXiv · 1004.0015

Analytic model for the surface potential and drain current in negative capacitance field-effect transistors

David Jimenez·Enrique Miranda·Andres Godoy

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Abstract

In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S<60 mV/decade). In this letter, a comprehensive physics-based surface potential and drain current model for the negative capacitance field-effect transistor is reported. The model is aimed to evaluate the potentiality of such transistors for low-power switching applications. Moreover it provides a model core for memories devices relying on the hysteretic behavior of the ferroelectric gate insulator.

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David Jimenez, Enrique Miranda, Andres Godoy. 2010-03-31. Analytic model for the surface potential and drain current in negative capacitance field-effect transistors. https://doi.org/10.1109/ted.2010.2062188

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