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arXiv · 1004.1385

Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Robert J. Young·Lorenzo O. Mereni·Nikolay Petkov·Gabrielle R. Knight·Valeria Dimastrodonato·Paul K. Hurley·Greg Hughes·Emanuele Pelucchi
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Abstract

We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0, 0.2, 0.4 and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of ~4.25 meV found from a 15nm quantum well. The width of the emission from the 15nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K), electron mobilities up to \mu ~ 3.5 x 10^4 cm2/Vs with an electron concentration of ~1 x 10^16.

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Robert J. Young, Lorenzo O. Mereni, Nikolay Petkov, Gabrielle R. Knight, Valeria Dimastrodonato, Paul K. Hurley, Greg Hughes, Emanuele Pelucchi. 2010-04-08. Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. https://doi.org/10.1016/j.jcrysgro.2010.01.033

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