Terahertz Response of Field-Effect Transistors in Saturation Regime

T. A. Elkhatib; V. Yu. Kachorovskii; W. J. Stillman; S. Rumyantsev; X. -C. Zhang; M. S. Shur

doi:10.1063/1.3584137

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arXiv · 1004.3740

Terahertz Response of Field-Effect Transistors in Saturation Regime

T. A. Elkhatib·V. Yu. Kachorovskii·W. J. Stillman·S. Rumyantsev·X. -C. Zhang·M. S. Shur

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Abstract

We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the saturation regimes.

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T. A. Elkhatib, V. Yu. Kachorovskii, W. J. Stillman, S. Rumyantsev, X. -C. Zhang, M. S. Shur. 2010-04-21. Terahertz Response of Field-Effect Transistors in Saturation Regime. https://doi.org/10.1063/1.3584137

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