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arXiv · 1004.3909

Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

A. Plecenik·M. Tomasek·T. Plecenik·M. Truchly·J. Noskovic·M. Zahoran·T. Roch·M. Belogolovskii·M. Spankova·S. Chromik·P. Kus
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Abstract

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.

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A. Plecenik, M. Tomasek, T. Plecenik, M. Truchly, J. Noskovic, M. Zahoran, T. Roch, M. Belogolovskii, M. Spankova, S. Chromik, P. Kus. 2010-04-22. Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions. https://doi.org/10.1016/j.apsusc.2010.03.018

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