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arXiv · 1005.0946

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

K. Y. Wang·K. W. Edmonds·A. C. Irvine·G. Tatara·E. De Ranieri·J. Wunderlich·K. Olejnik·A. W. Rushforth·R. P. Campion·D. A. Williams·C. T. Foxon·B. L. Gallagher
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Abstract

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction.

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K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher. 2010-12-31. Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device. https://doi.org/10.1063/1.3532095

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