arXiv · 1005.2023
High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers
Abstract
High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle delta omega = 0.5 deg and twist angle delta fai = 0.5 deg) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements resulted in the enhanced superconducting properties comparable to those of single crystals.
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Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. 2010-05-12. High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers. https://doi.org/10.1143/apex.3.063101
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