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arXiv · 1005.2099

Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

F. Pang·X. J. Liang·Z. L. Liao·S. L. Yin·D. M. Chen
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Abstract

Transport characteristics of single crystal bismuth films on Si(111)-7 \times 7 are found to be metallic or insulating at temperature below or above TC, respectively. The transition temperature TC decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behavior results from the states inside film, while the metallic behavior originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than TC. In addition, the metallic interface state is shown to result from the large SO-splitting at interfaces.

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F. Pang, X. J. Liang, Z. L. Liao, S. L. Yin, D. M. Chen. 2010-05-20. Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111). https://arxiv.org/abs/1005.2099

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