Anisotropic Correlations in Epitaxial Iron Silicide: Contribution of Surface and Bulk States
Scanning tunneling microscopy
cond-mat.str-el↗
arXiv subjects
D. M. Chen
Publications and source records attributed to D. M. Chen.
Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)
Transport characteristics of single crystal bismuth films on Si(111)-7 \times 7 are found to be metallic or insulating at temperature below or above TC, respectively. The transition temperature TC decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behavior results from the states inside film, while the metallic behavior originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than TC. In addition, the metallic interface state is shown to result from the large SO-splitting at interfaces.
cond-mat.mes-hall↗
Anisotropic Metal-Insulator Transition in Epitaxial Thin Films
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their elementary excitations possess coherent wave-like properties along the normal axis, and show an incoherent behavior in-plane. The development of such an anisotropic coherence is most likely related to Coulomb interaction between localized and delocalized thin film electronic states - 2D Kondo screening.
cond-mat.str-el↗