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arXiv · 1005.4799

Nanostructures in p-GaAs with improved tunability

M. Csontos·Y. Komijani·I. Shorubalko·K. Ensslin·D. Reuter·A. D. Wieck
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Abstract

A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.

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M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A. D. Wieck. 2010-05-26. Nanostructures in p-GaAs with improved tunability. https://doi.org/10.1063/1.3463465

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