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arXiv · 1006.0908

Fractional quantum Hall effect in CdTe

B. A. Piot·J. Kunc·M. Potemski·D. K. Maude·C. Betthausen·A. Vogl·D. Weiss·G. Karczewski·T. Wojtowicz
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Abstract

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.

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B. A. Piot, J. Kunc, M. Potemski, D. K. Maude, C. Betthausen, A. Vogl, D. Weiss, G. Karczewski, T. Wojtowicz. 2010-06-04. Fractional quantum Hall effect in CdTe. https://doi.org/10.1103/physrevb.82.081307

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