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arXiv · 1006.4376

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Dmitry Ruzmetov·Don Heiman·Bruce B. Claflin·Venkatesh Narayanamurti·Shriram Ramanathan
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Abstract

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.

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Dmitry Ruzmetov, Don Heiman, Bruce B. Claflin, Venkatesh Narayanamurti, Shriram Ramanathan. 2010-06-22. Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition. https://doi.org/10.1103/physrevb.79.153107

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