Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure

P. V. Leksin; N. N. Garifyanov; I. A. Garifullin; J. Schumann; H. Vinzelberg; V. Kataev; R. Klingeler; O. G. Schmidt; B. Buchner

doi:10.1063/1.3486687

arXiv · 1007.2511

Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure

P. V. Leksin·N. N. Garifyanov·I. A. Garifullin·J. Schumann·H. Vinzelberg·V. Kataev·R. Klingeler·O. G. Schmidt·B. Buchner

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Abstract

Superconductor/ferromagnet (S/F) proximity effect theory predicts that the superconducting critical temperature of the F1/F2/S or F1/S/F2 trilayers for the parallel orientation of the F1 and F2 magnetizations is smaller than for the antiparallel one. This suggests a possibility of a controlled switching between the superconducting and normal states in the S layer. Here, using the spin switch design F1/F2/S theoretically proposed by Oh et al. [Appl. Phys. Lett. 71, 2376 (1997)], that comprises a ferromagnetic bilayer separated by a non-magnetic metallic spacer layer as a ferromagnetic component, and an ordinary superconductor as the second interface component, we have successfully realized a full spin switch effect for the superconducting current.

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P. V. Leksin, N. N. Garifyanov, I. A. Garifullin, J. Schumann, H. Vinzelberg, V. Kataev, R. Klingeler, O. G. Schmidt, B. Buchner. 2010-07-15. Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure. https://doi.org/10.1063/1.3486687

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