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arXiv · 1007.3924

Rectification in three-terminal graphene junctions

A. Jacobsen·I. Shorubalko·L. Maag·U. Sennhauser·K. Ensslin
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Abstract

Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.

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A. Jacobsen, I. Shorubalko, L. Maag, U. Sennhauser, K. Ensslin. 2010-07-22. Rectification in three-terminal graphene junctions. https://doi.org/10.1063/1.3464978

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