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arXiv · 1008.0341

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Zoë Kugler·Volker Drewello·Markus Schäfers·Jan Schmalhorst·Günter Reiss·Andy Thomas
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Abstract

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11 % at room temperature and 18.5 % at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

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Zoë Kugler, Volker Drewello, Markus Schäfers, Jan Schmalhorst, Günter Reiss, Andy Thomas. 2010-08-02. Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy. https://doi.org/10.1016/j.jmmm.2010.08.038

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