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arXiv · 1008.0668

Vertical Field-Effect Transistor Based on Wavefunction Extension

Adam Sciambi·Matthew Pelliccione·Michael P. Lilly·Seth R. Bank·Arthur C. Gossard·Loren N. Pfeiffer·Ken W. West·David Goldhaber-Gordon
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Abstract

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

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Adam Sciambi, Matthew Pelliccione, Michael P. Lilly, Seth R. Bank, Arthur C. Gossard, Loren N. Pfeiffer, Ken W. West, David Goldhaber-Gordon. 2010-08-03. Vertical Field-Effect Transistor Based on Wavefunction Extension. https://doi.org/10.1103/physrevb.84.085301

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