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arXiv · 1008.1403

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

D. Vu·H. F. Jurca·F. Maroun·P. Allongue·N. Tournerie·A. C. H. Rowe·D. Paget·S. Arscott·E. Peytavit
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Abstract

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%.

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D. Vu, H. F. Jurca, F. Maroun, P. Allongue, N. Tournerie, A. C. H. Rowe, D. Paget, S. Arscott, E. Peytavit. 2010-08-16. Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt. https://doi.org/10.1103/physrevb.83.121304

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