arXiv subjects

E. Peytavit

Publications and source records attributed to E. Peytavit.

8 recordsLinked to original sources

arXiv2026

Circuit-Level Design, Modeling, and On-Wafer Characterization of a Coplanar THz Optoelectronic Mixer

We report the design, modeling, and on-wafer characterization of a photoconductive heterodyne mixer implemented as a true terahertz monolithic integrated circuit (TMIC). Unlike previous photoconductive heterodyne demonstrations, the proposed circuit is characterized using RF integrated circuit metrics including input return loss, RF/IF isolation, broadband impedance matching, and conversion loss. The mixer combines a microcavity photoconductor with a broadband coplanar matching network incorporating a Ti shunt resistor, an RF DC-blocking MIM capacitor, and an RF/IF decoupling capacitor. A circuit-level model including both the photoconductor and the distributed CPW accesses is developed and validated. The passive circuit is experimentally characterized up to 500 GHz using on-wafer VNA measurements and accurately reproduced by simulation. Under illumination, the model predicts an input reflection coefficient below -10 dB up to 215 GHz and better than -6.5 dB up to 500 GHz. Measured and simulated conversion losses agree within +/-1 dB over the entire 1-500 GHz range. Conversion loss varies from 22.5-25.5 dB below 320 GHz and 26-34 dB up to 500 GHz. The proposed TMIC demonstrates broadband operation and provides a validated circuit design methodology for future integrated THz photonic mixers.

physics.app-ph↗

arXiv2025

Room-temperature, continuous-wave Terahertz generation in free-space with an intersubband mid-infrared photomixer

We demonstrate a Terahertz photomixer pumped by mid-infrared photons at 10$\mu$m wavelength. The device is based on a dual-antenna architecture, in which a two-dimensional array of mid-infrared patch-antenna resonators is connected to the electrodes of a log-spiral Terahertz antenna. By exploiting intersubband absorption inside an AlGaAs-GaAs multi-quantum-well heterostructure, a photocurrent is coherently generated at the difference frequency between two quantum cascade lasers. The photocurrent drives the antenna electrodes allowing tunable, continuous-wave generation in free-space up to 1 Terahertz at room temperature. By experimentally studying the photomixer frequency response and dark impedance, we demonstrate that the observed power roll-off at high-frequency is limited by the combined effect of the photoexcited carrier's intrinsic lifetime and of the device $RC$ time constant. In the spectral range investigated we obtain, in continuous-wave, mid-infrared $\rightarrow$ Terahertz conversion efficiencies exceeding by orders of magnitude those of unipolar devices exploiting $\chi^{(2)}$ processes.

physics.optics↗

arXiv2021

Ultra-fast quantum-well infared photodetectors operating at 10μm with flat response up to 70GHz at room temperature

III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As multi-quantum-well heterostructure to demonstrate heterodyne detection at 10um wavelength with a nearly flat frequency response up to 70GHz at room temperature, solely limited by the measurement system bandwidth. This is the broadest RF-bandwidth reported to date for a quantum-well mid-infrared photodetector. Responsivities of 0.15A/W and 1.5A/W are obtained at 300K and 77K respectively. To allow ultrafast operation and illumination at normal incidence, the detector consists of a 50Ohm coplanar waveguide, monolithically integrated with a 2D-array of sub-wavelength antennas, electrically interconnected by suspended wires. With this device architecture we obtain a parasitic capacitance of ~30fF, corresponding to the static capacitance of the antennas, yielding a RC-limited 3dB cutoff frequency >150GHz at 300K, extracted with a small-signal equivalent circuit model. Using this model, we quantitively reproduce the detector frequency response and find intrinsic roll-off time constants as low as 1ps at room temperature.

physics.app-ph↗

arXiv2015

Anomalous temperature dependence of photoelectron charge and spin mobilities in p+-GaAs

The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions and exhibit the well known increase as the temperature is lowered. It is shown that this is related mainly to the electron statistics rather than the majority hole statistics. This finding suggests that current theoretical models based on degeneracy of majority carriers cannot fully explain the observed temperature dependence of minority carrier mobility.

cond-mat.mes-hall↗

arXiv2013

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.

cond-mat.mtrl-sci↗

arXiv2010

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%.

cond-mat.mes-hall↗

arXiv2010

Imaging charge and spin diffusion of minority carriers in GaAs

Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a contactless means to measure charge (L) and spin (L_s) diffusion lengths. The measured values of L and L_s are in excellent agreement with the spatially averaged polarization and a sharp reduction in these two quantities (L from 21.3 mum to 1.2 mum and L_s from 1.3 mum to 0.8 mum) is measured with increasing surface recombination. Outwards diffusion results in a factor of 10 increase in the polarization at the excitation spot.

cond-mat.mes-hall↗

arXiv2010

Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces

The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light power. The results are compared with the predictions of a model which includes the bias dependence of the tunnel barrier height and the bias-induced decrease of surface recombination velocity. It is found that i) the tunnel photocurrent from the conduction band dominates that from surface states. ii) At large tunnel distance the exponential bias dependence of the current is explained by that of the tunnel barrier height, while at small distance the change of surface recombination velocity is dominant.

cond-mat.mes-hall↗