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arXiv · 1102.3196

Design and modeling of a transistor vertical-cavity surface-emitting laser

Wei Shi·Behnam Faraji·Mark Greenberg·Jesper Berggren·Yu Xiang·Mattias Hammar·Michel Lestrade·Zhi-Qiang Li·Z. M. Simon Li·Lukas Chrostowski
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Abstract

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.

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Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li, Lukas Chrostowski. 2011-02-15. Design and modeling of a transistor vertical-cavity surface-emitting laser. https://doi.org/10.1007/s11082-011-9444-0

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