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arXiv · 1103.3288

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

Chi Vo-Van·Amina Kimouche·Antoine Reserbat-Plantey·Olivier Fruchart·Pascale Bayle-Guillemaud·Nedjma Bendiab·Johann Coraux
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Abstract

Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown by diffraction, scanning tunnelling microscopy, and Raman spectroscopy. Their structural quality is as high as that of graphene produced on Ir bulk single crystals, i.e. much higher than on metal thin films used so far.

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Chi Vo-Van, Amina Kimouche, Antoine Reserbat-Plantey, Olivier Fruchart, Pascale Bayle-Guillemaud, Nedjma Bendiab, Johann Coraux. 2011-03-16. Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire. https://doi.org/10.1063/1.3585126

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