Electrode level Monte Carlo model of radiation damage effects on astronomical CCDs

Abstract

Current optical space telescopes rely upon silicon Charge Coupled Devices (CCDs) to detect and image the incoming photons. The performance of a CCD detector depends on its ability to transfer electrons through the silicon efficiently, so that the signal from every pixel may be read out through a single amplifier. This process of electron transfer is highly susceptible to the effects of solar proton damage (or non-ionizing radiation damage). This is because charged particles passing through the CCD displace silicon atoms, introducing energy levels into the semi-conductor bandgap which act as localized electron traps. The reduction in Charge Transfer Efficiency (CTE) leads to signal loss and image smearing. The European Space Agency's astrometric Gaia mission will make extensive use of CCDs to create the most complete and accurate stereoscopic map to date of the Milky Way. In the context of the Gaia mission CTE is referred to with the complementary quantity Charge Transfer Inefficiency (CTI = 1-CTE). CTI is an extremely important issue that threatens Gaia's performances. We present here a detailed Monte Carlo model which has been developed to simulate the operation of a damaged CCD at the pixel electrode level. This model implements a new approach to both the charge density distribution within a pixel and the charge capture and release probabilities, which allows the reproduction of CTI effects on a variety of measurements for a large signal level range in particular for signals of the order of a few electrons. A running version of the model as well as a brief documentation and a few examples are readily available at http://www.strw.leidenuniv.nl/~prodhomme/cemga.php as part of the CEMGA java package (CTI Effects Models for Gaia).