Generation and detection of Terahertz radiation by Field Effect Transistors

M. I. Dyakonov

doi:10.1016/j.crhy.2010.05.003

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arXiv · 1103.4316

Generation and detection of Terahertz radiation by Field Effect Transistors

M. I. Dyakonov

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Abstract

This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the reduction of the channel dimensions and reach the THz range for sub-micron gate lengths. When the mobility is high enough, the dynamics of a short channel FET at THz frequencies is dominated by plasma waves. This may result, on the one hand, in a spontaneous generation of plasma waves by a dc current and on the other hand, in a resonant response to the incoming radiation. In the opposite case, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector.

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M. I. Dyakonov. 2011-03-22. Generation and detection of Terahertz radiation by Field Effect Transistors. https://doi.org/10.1016/j.crhy.2010.05.003

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