arXiv · 1103.5095
Electrical spin injection and transport in Germanium
Abstract
We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.
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Yi Zhou, Wei Han, Li-Te Chang, Faxian Xiu, Minsheng Wang, Michael Oehme, Inga A. Fischer, Joerg Schulze, Roland. K. Kawakami, Kang L. Wang. 2011-03-25. Electrical spin injection and transport in Germanium. https://doi.org/10.1103/physrevb.84.125323
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