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Faxian Xiu

Publications and source records attributed to Faxian Xiu.

At least 19 recordsLinked to original sources

Electrically Tunable Terahertz Chirality from Quantum Geometry

Quantum geometry encoded in the momentum space structure of electronic wavefunctions, governs charge dynamics through Berry curvature, enabling unconventional transport and optical responses. In topological semimetals, this geometry is sampled over Fermi pockets, suggesting electrical control by Fermi surface tuning, yet such control has remained largely limited to DC transport. Here we show that electrostatic gating of the 3D Dirac semimetal Cd3As2 reshapes Fermi pockets surrounding photoinduced Floquet Weyl nodes, enabling electrical control of terahertz (THz) emission chirality. Gate tuning selectively modulates the Berry curvature driven linearly polarized THz component by up to 60% and 49% at positive and negative bias, respectively, while the orthogonal linearly polarized photon-drag component remains unchanged. With the two orthogonal fields intrinsically phase-locked at \sfrac{\pi}{2} by the excitation geometry, the selective gate-tuned amplitude control enables the polarization tuning across the Poincar\'e sphere, achieving near-circular polarization (\chi\approx-42{\deg}) at +10 V. These results establish Fermi surface tuning as a general route to programmable quantum geometric control of chiral terahertz emission.

cond-mat.mes-hall

Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4

MnBi2Te4 is a versatile platform for exploring diverse topological quantum states, yet its potential is hampered by intrinsic antisite defects. While Sb substitution has been employed to tune the Fermi level towards the charge neutral point, it exacerbates the formation of Mn-Sb antisite defects. Here, we address this challenge by combining first-principles calculations with strategic synthesis to systematically investigate and control antisite defects in Mn(Bi1-xSbx)2Te4. Our calculations reveal that increasing antisite defect density progressively destroys the field-forced magnetic Weyl state, eventually driving the system into a trivial magnetic insulator. Motivated by these findings, we develop an optimized chemical vapor transport method, yielding high-quality Mn(Bi1-xSbx)2Te4 crystals with significantly reduced antisite defect density. The emergence of strong Shubnikov-de Haas oscillations in the forced ferromagnetic state and a pronounced anomalous Hall effect near charge neutrality, with opposite signs for n- and p-type samples, confirms the type-II Weyl semimetal nature. These findings underscore the critical role of antisite defects in determining the magnetic and topological properties of Mn(Bi1-xSbx)2Te4 and establish defect engineering via optimized synthesis as a crucial strategy for realizing its exotic magnetic topological states.

cond-mat.mtrl-sci

Giant enhancement of terahertz high-harmonic generation by cavity engineering of a three-dimensional Dirac semimetal

We report on time-resolved ultrafast terahertz high-harmonic generation of strong field driven-dynamics of many-body Dirac fermions. We demonstrate an experimental realization of near saturation regime of the high-order nonlinear responses with a giant enhancement of terahertz third- and fifth-order harmonic yields by cavity-engineering a three-dimensional Dirac semimetal Cd3As2. By fabricating a designed structure of metasurface microcavities on a nanometer Cd3As2 thin film, we significantly enhance the near-field intensity of a picosecond terahertz excitation pulse in resonance with the microcavity eigenmode. The strong terahertz field drives the far-from-equilibrium Dirac fermions deeply into a nonperturbative regime, leading to the observation of near-saturation high-harmonic emission. Our experimental results confirm the predictions by Boltzmann transport theory, and substantiate a field-driven kinetic description of the strong nonthermal nonlinearity at the terahertz frequencies.

cond-mat.mtrl-sci

Room-temperature intrinsic nonlinear planar Hall effect in TaIrTe$_4$

Intrinsic responses are of paramount importance in physics research, as they represent the inherent properties of materials, independent of extrinsic factors that vary from sample to sample, and often reveal the intriguing quantum geometry of the band structure. Here, we report the experimental discovery of a new intrinsic response in charge transport, specifically the intrinsic nonlinear planar Hall effect (NPHE), in the topological semimetal TaIrTe$_4$. This effect is characterized by an induced Hall current that is quadratic in the driving electric field and linear in the in-plane magnetic field. The response coefficient is determined by the susceptibility tensor of Berry-connection polarizability dipole, which is an intrinsic band geometric quantity. Remarkably, the signal persists up to room temperature. Our theoretical calculations show excellent agreement with the experimental results and further elucidate the significance of a previously unknown orbital mechanism in intrinsic NPHE. This finding not only establishes a novel intrinsic material property but also opens a new route toward innovative nonlinear devices capable of operating at room temperature.

cond-mat.mes-hall

Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2

The ability to optically engineer the Dirac band and electrically control the Fermi level in two-dimensional (2D) Dirac systems, such as graphene, has significantly advanced quantum technologies. However, similar tunability has remained elusive in three-dimensional Dirac systems. In this work, we demonstrate both optical and electrical tunability of the band structure in the 3D Dirac semimetal Cd3As2. Photoexcitation with circularly polarized light breaks time-reversal symmetry, lifting the degeneracy at Dirac points to transform the material into a Floquet Weyl semimetal with chiral Weyl nodes. This transition induces nonzero Berry curvature, giving rise to helicity-dependent transverse anomalous photocurrents, detectable through terahertz emission at normal incidence. Furthermore, applying an external electric field displaces the Fermi level away from the Dirac point, enlarging the Dirac cone projection leading to a reduced density of states of Fermi arcs. As a result, we achieve precise electrical control over Floquet band engineering, resulting in a large modulation of THz emission. Moreover, at oblique incidence, the circular photon-drag effect induces helicity-dependent longitudinal photocurrents. Simultaneous generation and manipulation of both longitudinal and transverse photocurrents enable precise control of the helicity of emitted THz pulses. These results pave the way for electric field-controlled Floquet Weyl THz sources, offering significant potential for applications in quantum computing and low-power electronics.

cond-mat.mtrl-sci

Room-temperature nonlinear transport and microwave rectification in antiferromagnetic MnBi$_2$Te$_4$ films

The discovery of the nonlinear Hall effect provides an avenue for studying the interplay among symmetry, topology, and phase transitions, with potential applications in signal doubling and high-frequency rectification. However, practical applications require devices fabricated on large area thin film as well as room-temperature operation. Here, we demonstrate robust room-temperature nonlinear transverse response and microwave rectification in MnBi$_2$Te$_4$ films grown by molecular beam epitaxy. We observe multiple sign-reversals in the nonlinear response by tuning the chemical potential. Through theoretical analysis, we identify skew scattering and side jump, arising from extrinsic spin-orbit scattering, as the main mechanisms underlying the observed nonlinear signals. Furthermore, we demonstrate radio frequency (RF) rectification in the range of 1-8 gigahertz at 300 K. These findings not only enhance our understanding of the relationship between nonlinear response and magnetism, but also expand the potential applications as energy harvesters and detectors in high-frequency scenarios.

cond-mat.mtrl-sci

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound. Here we report the observation of quantum oscillations from Landau quantization near the Mott-Ioffe-Regel limit in CaAs3. Despite the insulator-like temperature dependence of resistivity, CaAs3 presents giant magnetoresistance and prominent Shubnikov-de Haas oscillations from Fermi surfaces, indicating highly coherent band transport. In contrast, the quantum oscillation is absent in the magnetic torque. The quasiparticle effective mass increases systematically with magnetic fields, manifesting a much larger value than the expectation given by magneto-infrared spectroscopy. It suggests a strong many-body renormalization effect near Fermi surface. We find that these unconventional behaviors may be explained by the interplay between the mobility edge and the van Hove singularity, which results in the formation of coherent cyclotron orbits emerging at the diffusive bound. Our results call for further study on the electron correlation effect of the van Hove singularity.

cond-mat.str-el

Population inversion and ultrafast terahertz nonlinearity of transient Dirac fermions in Cd$_3$As$_2$

Harmonic generation provides an efficient tool for the study of ultrafast nonlinear dynamics. We report on time-resolved optical-pump terahertz-harmonic-generation spectroscopic investigation of ultrafast nonlinearity in a prototypical three-dimensional Dirac semimetal Cd$_3$As$_2$. A transient population inversion characterized by excessive nonthermal Dirac electrons and holes is found to be very sensitive and responsive to a periodic terahertz drive, leading to very efficient terahertz third-harmonic generation. Based on the Boltzmann transport theory, we analyze the terahertz field-driven kinetics of the transient Dirac fermions that is responsible for the observed strong terahertz nonlinearity.

cond-mat.mtrl-sci

Magnetic-field-induced nonlinear transport in HfTe5

The interplay of electron correlations and topological phases gives rise to various exotic phenomena including fractionalization, excitonic instability, and axionic excitation. Recently-discovered transition-metal pentatellurides can reach the ultra-quantum limit in low magnetic fields and serve as good candidates for achieving such a combination. Here, we report evidences of density wave and metal-insulator transition in HfTe5 induced by intense magnetic fields. Using the nonlinear transport technique, we detect a distinct nonlinear conduction behavior in the longitudinal resistivity within the a-c plane, corresponding to the formation of a density wave induced by magnetic fields. In high fields, the onset of the nonlinear conduction in the Hall resistivity indicates an impurity-pinned magnetic freeze-out as the possible origin of the insulating behavior. These frozen electrons can be gradually re-activated into mobile states above a threshold electric field. These experimental evidences call for further investigations into the underlying mechanism for the bulk quantum Hall effect and field-induced phase transtions in pentatellurides.

cond-mat.mes-hall

Ellipticity control of terahertz high-harmonic generation in a Dirac semimetal

We report on terahertz high-harmonic generation in a Dirac semimetal as a function of the driving-pulse ellipticity and on a theoretical study of the field-driven intraband kinetics of massless Dirac fermions.Very efficient control of third-harmonic yield and polarization state is achieved in electron-doped Cd$_3$As$_2$ thin films at room temperature. The observed tunability is understood as resulting from terahertz-field driven intraband kinetics of the Dirac fermions. Our study paves the way for exploiting nonlinear optical properties of Dirac matter for applications in signal processing and optical communications.

cond-mat.mtrl-sci

Semiconductor-like photocarrier dynamics in Dirac Semimetal Cd3As2 film Probed with transient Terahertz Spectroscopy

The topological three-dimensional Dirac semimetal Cd3As2 has drawn great attention for the novel physics and promising applications in optoelectronic devices operating in the infrared and THz regimes. Among the extensive studies in the past decades, one intriguing debate is the underlined mechanism that governing the nonequilibrium carrier dynamics following photoexcitation. In this study, the temperature dependent photocarrier dynamics in Cd3As2 film has been investigated with time-resolved terahertz spectroscopy. The experimental results demonstrate that photoexcitation results in abrupt increase in THz photoconductivity, and the subsequent relaxation shows a single exponential relaxation for various temperatures and pump fluences. The relaxation time increase from 4.7 ps at 5 K to 7.5 ps at 220 K, while the lifetime remains almost constant of ~7.5 ps with temperature above 220 K. A Rothwarf-Taylor model was employed to fit the temperature dependent relaxation time, and a narrow energy gap of ~35 meV is obtained, which occurs around the Dirac node. Our THz spectroscopy results demonstrate that the photocarrier relaxation in Cd3As2 shows a semiconductor-like behavior, rather than hot carrier scatterings in graphene and most of metals.

cond-mat.str-el

Ultrafast photothermoelectric effect in Dirac semimetallic Cd3As2 revealed by terahertz emission

The thermoelectric effects of topological semimetals have attracted tremendous research interest because many topological semimetals are excellent thermoelectric materials and thermoelectricity serves as one of their most important potential applications. In this work, we reveal the transient photothermoelectric response of Dirac semimetallic Cd3As2, namely the photo-Seebeck effect and photo-Nernst effect, by studying the terahertz (THz) emission from the transient photocurrent induced by these effects. Our excitation polarization and power dependence confirm that the observed THz emission is due to photothermoelectric effect instead of other nonlinear optical effect. Furthermore, when a weak magnetic field (~0.4 T) is applied, the response clearly indicates an order of magnitude enhancement on transient photothermoelectric current generation compared to the photo-Seebeck effect. Such enhancement supports an ambipolar transport nature of the photo-Nernst current generation in Cd3As2. These results highlight the enhancement of thermoelectric performance can be achieved in topological Dirac semimetals based on the Nernst effect, and our transient studies pave the way for thermoelectric devices applicable for high field circumstance when nonequilibrium state matters. The large THz emission due to highly efficient photothermoelectric conversion is comparable to conventional semiconductors through optical rectification and photo-Dember effect.

cond-mat.mtrl-sci

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator that exhibits quantum AHE in exfoliated nanoflakes. However, its complicated AHE behaviors may offer an opportunity for the unexplored correlation between magnetism and band structure. Here, we show the Berry curvature dominated intrinsic AHE in wafer-scale MnBi2Te4 thin films. By utilizing a high-dielectric SrTiO3 as the back-gate, we unveil an ambipolar conduction and electron-hole carrier (n-p) transition in ~7 septuple layer MnBi2Te4. A quadratic relation between the saturated AHE resistance and longitudinal resistance suggests its intrinsic AHE mechanism. For ~3 septuple layer MnBi2Te4, however, the AHE reverses its sign from pristine negative to positive under the electric-gating. The first-principles calculations demonstrate that such behavior is due to the competing Berry curvature between polarized spin-minority-dominated surface states and spin-majority-dominated inner-bands. Our results shed light on the physical mechanism of the gate-tunable intrinsic AHE in MnBi2Te4 thin films and provide a feasible approach to engineering its AHE.

cond-mat.mtrl-sci

Tunable terahertz plasmons in graphite thin films

Tunable terahertz plasmons are essential for reconfigurable photonics, which have been demonstrated in graphene through gating, though with relatively weak responses. Here, we demonstrate strong terahertz plasmons in graphite thin films via infrared spectroscopy, with dramatic tunability by even a moderate temperature change or an in-situ bias voltage. Meanwhile, through magneto-plasmon studies, we reveal that massive electrons and massless Dirac holes make comparable contributions to the plasmon response. Our study not only sets up a platform for further exploration of two-component plasmas, but also opens an avenue for terahertz modulation through electrical bias or all-optical means.

physics.optics

Giant nonlinear anomalous Hall effect induced by spin-dependent band structure evolution

Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and electron orders. Nonlinear AHE includes the topological Hall effect (THE) that has been widely used to identify the presence of spin chirality in real space. But it can in principle be induced by band structure evolution via Berry curvatures in the reciprocal space. This effect has been largely overlooked due to the intertwined mechanisms in both real and reciprocal spaces. Here, we observed a giant nonlinear AHE with the resistivity up to 383.5 uohm cm, contributing unprecedentedly 97% of the total Hall response in EuCd2As2. Moreover, it can be further enhanced by tilting the magnetic field 30° away from [001] direction, reaching a large anomalous Hall angle up to 21%. Although it shows exactly the same double-peak feature as THE, our scaling analysis and first-principles calculations reveal that the Berry phase is extremely sensitive to the spin canting, and nonlinear AHE is a consequence of band structure evolution under the external magnetic fields. When the spins gradually tilt from the in-plane antiferromagnetic ground state to out-of-plane direction, band crossing and band inversion occur, introducing a bandgap at Γ point at a canting angle of 45°. That contributes to the enhancement of Berry curvature and consequently a large intrinsic Hall conductivity. Our results unequivocally reveal the sensitive dependence of band structures on spin tilting process under external magnetic fields and its pronounced influence on the transport properties, which also need to be taken into consideration in other magnetic materials.

cond-mat.mtrl-sci

Plasmons in the van der Waals charge-density-wave material 2H-TaSe2

Plasmons in two-dimensional (2D) materials beyond graphene have recently gained much attention. However, the experimental investigation is limited due to the lack of suitable materials. Here, we experimentally demonstrate localized plasmons in a correlated 2D charge-density-wave (CDW) material: 2H-TaSe2. The plasmon resonance can cover a broad spectral range from the terahertz (40 μm) to the telecom (1.55 μm) region, which is further tunable by changing thickness and dielectric environments. The plasmon dispersion flattens at large wave vectors, resulted from the universal screening effect of interband transitions. More interestingly, anomalous temperature dependence of plasmon resonances associated with CDW excitations is observed. In the CDW phase, the plasmon peak close to the CDW excitation frequency becomes wider and asymmetric, mimicking two coupled oscillators. Our study not only reveals the universal role of the intrinsic screening on 2D plasmons, but also opens an avenue for tunable plasmons in 2D correlated materials.

cond-mat.mes-hall

Van der Waals Ferromagnetic Josephson Junctions

Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and π phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures.

cond-mat.mes-hall

The Discovery of Tunable Universality Class in Superconducting $β$-W Thin Films

The interplay between quenched disorder and critical behavior in quantum phase transitions is conceptually fascinating and of fundamental importance for understanding phase transitions. However, it is still unclear whether or not the quenched disorder influences the universality class of quantum phase transitions. More crucially, the absence of superconducting-metal transitions under in-plane magnetic fields in 2D superconductors imposes constraints on the universality of quantum criticality. Here, we discover the tunable universality class of superconductor-metal transition by changing the disorder strength in $β$-W films with varying thickness. The finite-size scaling uncovers the switch of universality class: quantum Griffiths singularity to multiple quantum criticality at a critical thickness of $t_{c \perp 1}\sim 8 nm$ and then from multiple quantum criticality to single criticality at $t_{c\perp 2}\sim 16 nm$. Moreover, the superconducting-metal transition is observed for the first time under in-plane magnetic fields and the universality class is changed at $t_{c \parallel }\sim 8 nm$. The discovery of tunable universality class under both out-of-plane and in-plane magnetic fields provides broad information for the disorder effect on superconducting-metal transitions and quantum criticality.

cond-mat.supr-con