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arXiv · 1104.0520

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

Valeria Dimastrodonato·Lorenzo O. Mereni·Robert J. Young·Emanuele Pelucchi
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Abstract

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27{\mu}eV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

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Valeria Dimastrodonato, Lorenzo O. Mereni, Robert J. Young, Emanuele Pelucchi. 2011-04-04. Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots. https://doi.org/10.1016/j.jcrysgro.2010.09.011

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