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arXiv · 1104.1818

DOS-limited contact resistance in graphene FETs

Kosuke Nagashio·Akira Toriumi
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Abstract

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties as performance killers, as a very small density of states in graphene might suppress the current injection from metal to graphene. This paper systematically reviews the metal/graphene contact properties and discusses the present status and future requirements of the specific contact resistivity.

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Kosuke Nagashio, Akira Toriumi. 2011-04-11. DOS-limited contact resistance in graphene FETs. https://arxiv.org/abs/1104.1818

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