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arXiv · 1104.2812

Highly p-doped graphene obtained by fluorine intercalation

Andrew L. Walter·Ki-Joon Jeon·Aaron Bostwick·Florian Speck·Markus Ostler·Thomas Seyller·Luca Moreschini·Yong Su Kim·Young Jun Chang·Karsten Horn·Eli Rotenberg
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Abstract

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .

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Andrew L. Walter, Ki-Joon Jeon, Aaron Bostwick, Florian Speck, Markus Ostler, Thomas Seyller, Luca Moreschini, Yong Su Kim, Young Jun Chang, Karsten Horn, Eli Rotenberg. 2011-04-14. Highly p-doped graphene obtained by fluorine intercalation. https://doi.org/10.1063/1.3586256

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