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arXiv · 1104.3635

Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

Carlos Diaz-Pinto·Xuemei Wang·Sungbae Lee·Viktor G. Hadjiev·Debtanu De·Wei-Kan Chu·Haibing Peng
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Abstract

We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant short-range disorders (implanted boron or carbon atoms), consistent with recent non-Markovian transport theory. Our experiments suggest the important role of the non-Markovian process in the intriguing MR behavior for graphitic systems, and open a new window for understanding transport phenomena beyond the Drude-Boltzmann approach and tailoring the electronic properties of graphitic layers.

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Carlos Diaz-Pinto, Xuemei Wang, Sungbae Lee, Viktor G. Hadjiev, Debtanu De, Wei-Kan Chu, Haibing Peng. 2011-04-19. Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation. https://doi.org/10.1103/physrevb.83.235410

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