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arXiv · 1106.1202

Large-scale defect accumulations in Czochralski-grown silicon

V. P. Kalinushkin·A. N. Buzynin·V. A. Yuryev·O. V. Astafiev
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Abstract

Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated.

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V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev, O. V. Astafiev. 2011-06-06. Large-scale defect accumulations in Czochralski-grown silicon. https://arxiv.org/abs/1106.1202

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