SearcharxivSearch

arXiv subjects

V. A. Yuryev

Publications and source records attributed to V. A. Yuryev.

At least 19 recordsLinked to original sources

Crystallites in Color Glass Beads of the 19th Century and Their Influence on Fatal Deterioration of Glass

Glass corrosion is a crucial problem in keeping and conservation of beadworks in museums. All kinds of glass beads undergo deterioration but blue-green lead-potassium glass beads of the 19th century are subjected to the destruction to the greatest extent. Blue-green lead-potassium glass beads of the 19th century obtained from exhibits kept in Russian museums were studied with the purpose to determine the causes of the observed phenomenon. For the comparison, yellow lead beads of the 19th century were also explored. Both kinds of beads contain Sb but yellow ones are stable. Using scanning electron microscopy, energy dispersive X-ray microspectrometry, electron backscatter diffraction, transmission electron microscopy and X-ray powder analysis, we have registered the presence of crystallites of orthorhombic KSbOSiO$_4$ and cubic Pb$_2$Sb$_{1.5}$Fe$_{0.5}$O$_{6.5}$ in glass matrix of blue-green and yellow beads, respectively. Both compounds form at rather high temperatures obviously during glass melting and/or melt cooling. We suppose that the crystallites generate internal tensile strain in glass during its cooling which causes formation of multiple microcracks in inner domains of blue-green beads. We suggest that the deterioration degree depends on quantity of the precipitates, their sizes and their temperature coefficients of linear expansion. In blue-green beads, the crystallites are distributed in their sizes from $\sim\,$200 nm to several tens of $μ$m and tend to gather in large colonies. The sizes of crystallites in yellow beads are several hundreds of nm and their clusters contain few crystallites. This explains the difference in corrosion of these kinds of beads containing crystals of Sb compounds.

cond-mat.mtrl-sci

KSbOSiO$_4$ microcrystallites as a source of corrosion of blue-green lead-potassium glass beads of the 19th century

Presently, deterioration of glass beads is a significant problem in conservation and restoration of beaded exhibits in museums. Glass corrosion affects nearly all kinds of beads but cloudy blue-green ones are more than others subjected to disastrous destruction. However, physical and chemical mechanisms of this phenomenon have not been understood thus far. This article presents results of a study of elemental and phase composition of glass of the blue-green beads of the 19th century obtained from exhibits kept in Russian museums. Using scanning electron microscopy, X-ray microanalysis and X-ray powder analysis we have detected and investigated Sb-rich microinclusions in the glass matrix of these beads and found them to be micro crystallites of KSbSiO$_5$. These crystallites were not detected in other kinds of beads which are much less subjected to corrosion than the blue-green ones and deteriorate in a different way. We belive that individual precipitates of KSbSiO$_5$ and especially their clusters play a major role in the blue-green bead deterioration giving rise to slow internal corrosion of the bead glass.

cond-mat.mtrl-sci

Room-temperature formation of Pt$_3$Si/Pt$_2$Si films on poly-Si substrates

We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt and poly-Si films as a result of Pt magnetron sputtering at room temperature. This layer likely appears due to high enough temperature of Pt ions in the magnetron plasma sufficient for chemical reaction of the silicide film formation on the Si surface. The Pt$_3$Si layer likely forms from the Pt--Pt$_3$Si layer (Pt$_{95}$Si$_5$), which arises under Pt film during the magnetron sputtering, as a result of Pt removal by wet etching.

cond-mat.mtrl-sci

Ge clusters and wetting layers forming from granular films on the Si(001) surface

The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at 600C in conditions of a closed system, the Ge granular film transforms to the usual wetting layer and Ge clusters with multimodal size distribution and the Ge oval drops having the highest number density. After the long-term thermal treatment of the Ge film at the same temperature, Ge drops disappear; the large clusters increase their sizes at the expense of the smaller ones. The total density of Ge clusters on the surface drastically decreases. The wetting layer mixed c(4 x 2) + p(2 x 2) reconstruction transforms to the single c(4 x 2) one which is likely thermodynamically favoured. Pyramids or domes are not observed on the surface after any annealing.

cond-mat.mtrl-sci

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about $-$2%/$^{\circ}$C in the temperature interval from 25 to 50$^{\circ}$C.

cond-mat.mtrl-sci

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

Nickel silicide Schottky diodes formed on polycrystalline Si films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as multi-phase compound composed by 20 to 40% of Ni3Si, 30 to 60% of Ni2Si and 10 to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from ~100 to ~20 for the temperature increasing from 22 to 70C; they exceed 1000 at 80K. A barrier of ~0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-emf spectra at 80K and attributed to the Ni-silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3 to 0.6%/K for forward biasing and around 2.5%/K for reverse biasing of the diodes.

cond-mat.mtrl-sci

Calculation of thermal parameters of SiGe microbolometers

The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10$^-3$ cm$^2$K/W at the SiGe interface.

cond-mat.mtrl-sci

Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM

Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated. To decrease the cleaning temperature, a silicon surface was hydrogenated in the process of a preliminary chemical treatment in HF and NH_4F aqueous solutions. It has been shown that smooth surfaces composed by wide terraces separated by monoatomic steps can be obtained by dehydrogenation at the temperatures > 600C, whereas clean surfaces obtained at the temperatures < 600C are rough. It has been found that there exists a dependence of structural properties of clean surfaces on the temperature of hydrogen thermal desorption and the process of the preliminary chemical treatment. The frequency of detachment/attachment of Si dimers from/to the steps and effect of the Ehrlich-Schwoebel barrier on ad-dimer migration across steps have been found to be the most probable factors determining a degree of the resultant surface roughness.

cond-mat.mtrl-sci

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 mcm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies 0.3-1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity decreases. We discuss possible mechanisms that can be responsible for the observed effects.

cond-mat.mtrl-sci

STM investigation of structural properties of Si layers deposited on Si(001) vicinal surfaces

This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt direction of a Si(001) wafer and epilayer growth mode. We suppose these effects to be connected with mutual interaction of monoatomic steps.

cond-mat.mtrl-sci

Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported.

cond-mat.mtrl-sci

Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer

Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of {105}-faceted clusters on the Ge wetting layer have been observed at high temperatures: Pyramids have been observed to nucleate via the previously described formation of strictly determined structures, resembling blossoms, composed by 16 dimers grouped in pairs and chains of 4 dimes on tops of the wetting layer M x N patches, each on top of a separate single patch, just like it goes on at low temperatures; an alternative process consists in faceting of shapeless heaps of excess Ge atoms which arise in the vicinity of strong sinks of adatoms, such as pits or steps. The latter process has never been observed at low temperatures; it is typical only for the high-temperature deposition mode.

cond-mat.mtrl-sci

Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics

Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics

cond-mat.mtrl-sci

Application of elastic mid-IR light scattering for inspection of internal gettering operations

Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), which has been successfully applied thus far for the investigation of large-scale electrically active defect accumulations (LSDAs) in semiconductor crystals.

cond-mat.mtrl-sci

Large-scale defect accumulations in Czochralski-grown silicon

Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated.

cond-mat.mtrl-sci

Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples

cond-mat.mtrl-sci