arXiv · 1107.0359
Silicon spin communication
Abstract
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.
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Hanan Dery, Yang Song, Pengke Li, Igor Zutic. 2011-07-02. Silicon spin communication. https://doi.org/10.1063/1.3624923
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