arXiv subjects

Pengke Li

Publications and source records attributed to Pengke Li.

At least 19 recordsLinked to original sources

arXiv2022

Intervalley electron-hole exchange interaction and impurity-assisted recombination of indirect excitons in WS$_2$ and WSe$_2$ monolayers

The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species is the indirect exciton (momentum or valley dark), which is responsible to a series of resonances when the monolayer is charge neutral. We investigate the short-range electron-hole exchange interaction of the indirect exciton, as well as its recombination mechanism mediated by impurities. The analysis provides thorough understanding of the energy and polarization of the zero-phonon indirect exciton resonance in the emission spectrum.

cond-mat.mes-hall↗

arXiv2020

Mid-infrared photoconductivity spectra of single tellurium nanowires]{Mid-infrared photoconductivity spectra of single tellurium nanowires

Due to its low bandgap and high optical efficiency, tellurium is considered an important material candidate for mid-infrared applications. Taking advantage of its structural anisotropy, we fabricated tellurium nanowire devices and investigated the radiative interaction of charge carriers by the polarization-resolved photoconductivity spectra under mid-infrared illumination. The intensity of the photoresponse shows sensitive dependence on temperature and could be significantly boosted by positive voltage bias from the back gate.

cond-mat.mes-hall↗

arXiv2019

Origins of electromagnetic anisotropy in monolayer black phosphorus

Contrary to empirical observations, lowest-order $k\cdot\hat{p}$ theory predicts that monolayer black phosphorus ("phosphorene") is completely immune to zigzag-polarized optical excitation at the bandgap energy. Using symmetry arguments, we derive a $2\times2$ Hamiltonian under the $k\cdot\hat{p}$ formalism including higher-order corrections, which is used to show that the experimentally-measured band-gap transition with zigzag polarization is dominated by the third order $k\cdot\hat{p}$ perturbation in the interband optical matrix element, whereas the effects of spin-orbit interaction are negligible in this material, consistent with a trivial orbital diamagnetic contribution to the $\textit{g}$-factor.

cond-mat.mtrl-sci↗

arXiv2018

Excitons without effective mass: biased bilayer graphene

Understanding the dynamics of excitons in two dimensional semiconductors requires a theory that incorporates the essential physics distinct from their three-dimensional counterparts. In addition to the modified dielectric environment, single-particle states with strongly non-parabolic dispersion appear in many two-dimensional band structures, so that "effective mass" is ill-defined. Focusing on electrostatically-biased bilayer graphene as an example where quartic (and higher) dispersion terms are necessary, we present a semi-analytic theory used to investigate the properties of ground and excited excitonic states. This includes determination of relative oscillator strengths and magnetic moments (g-factors) which can be directly compared to recent experimental measurements.

cond-mat.mes-hall↗

arXiv2018

Kramers' revenge

The combination of space inversion and time reversal symmetries result in doubly-degenerate Bloch states with opposite spin. Many lattices with these symmetries can be constructed by combining a noncentrosymmetric potential (lacking this degeneracy) with its inverted copy. Using simple models, we unravel the evolution of local spin-splitting during this process of inversion symmetry restoration, in the presence of spin-orbit interaction and sublattice coupling. Importantly, through an analysis of quantum mechanical commutativity, we examine the difficulty of identifying states that are simultaneously spatially segregated and spin polarized. We also explain how experimental probes (such as angle-resolved photoemission spectroscopy, or ARPES) of `hidden spin polarization' in layered materials are susceptible to unrelated spin splitting intrinsically induced by broken inversion symmetry at the surface.

cond-mat.mtrl-sci↗

arXiv2017

Intrinsic two-dimensional state on the pristine surface of tellurium

Using a tight-binding description, we show how the zero-dimensional state bound to the edge of a single one-dimensional helical chain of tellurium atoms evolves into two-dimensional states on the c-axis surface of the three-dimensional trigonal bulk. We give an effective Hamiltonian description of its dispersion in k-space by exploiting confinement to a virtual bilayer, and elaborate on the diminished role of spin-orbit coupling. These previously-unidentified intrinsic gap-penetrating surface bands were neglected in the interpretation of seminal experiments, where two-dimensional transport was otherwise attributed to extrinsic accumulation layers.

cond-mat.mes-hall↗

arXiv2017

Robust zero-energy bound states in a helical lattice

Atomic-scale helices exist as motifs for several material lattices. We examine a tight-binding model for a single one-dimensional monatomic chain with a p-orbital basis coiled into a helix. A topologically nontrivial phase emerging from this model supports a zero-energy mode localized to a boundary, always embedded within a continuum band, regardless of termination site. We identify a topological invariant for this phase that is related to the number of zero energy end modes by means of the bulk-boundary correspondence, and give strict conditions for the existence of the bound state. Another, non-topological, gapped edge mode in the model spectrum has practical consequences for surface states in e.g. trigonal tellurium and selenium and other van der Waals-bonded one-dimensional semiconductors.

cond-mat.mes-hall↗

arXiv2016

Electrons, holes, and spin in the IV-VI monolayer 'four-six-enes'

Bandedge states in the indirect-gap group-IV metal monochalcogenide monolayers ('four-six-enes' such as SnS, GeTe, etc.) inherit the properties of nearby reciprocal space points of high symmetry at the Brillouin zone edge. We employ group theory and the method of invariants to capture these essential symmetries in effective Hamiltonians including spin-orbit coupling, and use perturbation theory to shed light on the nature of the bandedge states. In particular, we show how the structure of derived wavefunctions leads to specific dominant momentum and spin scattering mechanisms for both valence holes and conduction electrons, we analyze the direct optical transitions across the bandgap, and expose the interactions responsible for subtle features of the local dispersion relations.

cond-mat.mtrl-sci↗

arXiv2016

Interpreting current-induced spin polarization in topological insulator surface states

Several recent experiments on three-dimensional topological insulators claim to observe a large charge current-induced non-equilibrium ensemble spin polarization of electrons in the helical surface state. We present a comprehensive criticism of such claims, using both theory and experiment: First, we clarify the interpretation of quantities extracted from these measurements by deriving standard expressions from a Boltzmann transport equation approach in the relaxation-time approximation at zero and finite temperature to emphasize our assertion that, despite high in-plane spin projection, obtainable current-induced ensemble spin polarization is minuscule. Second, we use a simple experiment to demonstrate that magnetic field-dependent open-circuit voltage hysteresis (identical to those attributed to current-induced spin polarization in topological insulator surface states) can be generated in analogous devices where current is driven through thin films of a topologically-trivial metal. This result *ipso facto* discredits the naive interpretation of previous experiments with TIs, which were used to claim observation of helicity, i.e. spin-momentum locking in the topologically-protected surface state.

cond-mat.mtrl-sci↗

arXiv2016

Spin polarization control in a 2-dimensional semiconductor

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the logic operation, but any spins remaining past this event will pollute the environment for subsequent clock cycles. Electric fields can be used to manipulate these spins on a fast timescale by careful interplay of spin-orbit effects, but efficient controlled depolarization can only be completely achieved with amenable materials properties. Taking III-VI monochalcogenide monolayers as an example 2D semiconductor, we use symmetry analysis, perturbation theory, and ensemble calculation to show how this longstanding problem can be solved by suitable manipulation of conduction electrons.

cond-mat.mes-hall↗

arXiv2015

Symmetry, distorted bandstructure, and spin-orbit coupling of (group-III) metal-monochalcogenide monolayers

The electronic structure of (group-III) metal-monochalcogenide monolayers exhibits many unusual features. Some, such as the unusually distorted upper valence band dispersion we describe as a 'caldera', are primarily the result of purely orbital interactions. Others, including spin splitting and wavefunction spin-mixing, are directly driven by spin-orbit coupling. We employ elementary group theory to explain the origins of these properties, and use a tight-binding model to calculate the phenomena enabled by them, such as band-edge carrier effective g-factors, optical absorption spectrum, conduction electron spin orientation, and a relaxation-induced upper valence band population inversion and spin polarization mechanism.

cond-mat.mtrl-sci↗

arXiv2014

Electrons and holes in phosphorene

We present a symmetry analysis of electronic bandstructure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ('phosphorene'). Expressions for energy dispersion relation and spin-dependent eigenstates for electrons and holes are found via simplification of a perturbative expansion in wavevector $k$ away from the zone center using elementary group theory. Importantly, we expose the underlying symmetries giving rise to substantial anisotropy in optical absorption, charge and spin transport properties, and reveal the mechanism responsible for valence band distortion and possible lack of a true direct gap.

cond-mat.mtrl-sci↗

arXiv2014

Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.

cond-mat.mes-hall↗

arXiv2014

Inelastic electron tunneling spectroscopy of local "spin accumulation" devices

We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and magnetic field dependences of the IET spectra were found to account for the dominant contribution to 3T magnetoresistance signals, thus indicating that it arises from inelastic tunneling through impurities and defects at junction interfaces and within the barrier, rather than from spin accumulation due to pure elastic tunneling into bulk Si as has been previously assumed.

cond-mat.mtrl-sci↗

arXiv2013

Anisotropy-driven spin relaxation in germanium

A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The confluence of electron-phonon scattering (leading to Elliott-Yafet spin flips) and this previously unobserved physics enables the extraction of spin lifetime solely from spin-valve measurements, without spin precession, and in a regime of substantial electric-field-generated carrier heating. We find spin lifetimes in Ge up to several hundreds of ns at low temperature, far beyond any other available experimental results.

cond-mat.mtrl-sci↗

arXiv2012

Spin-dependent optical properties in strained silicon and germanium

We present a comprehensive theory of the circularly polarized luminescence and its dependence on strain in spin-polarized Si and Ge. Symmetries of wavefunctions and interactions are used to derive concise ratios between intensities of the right and left circularly polarized luminescence for each of the dominant phonon-assisted optical transitions. These ratios are then used to explain the circular polarization degrees of the luminescence peaks in the spectra of biaxially-strained Si and Ge, and of relaxed ${\rm{Si}}_{1-x}{\rm{Ge}}_{x}$ alloys. The spectra are numerically calculated by a combination of an empirical pseudopotential method, an adiabatic bond-charge model and a rigid-ion model.

cond-mat.mtrl-sci↗

arXiv2012

Intrinsic Spin Lifetime of Conduction Electrons in Germanium

We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent $\mathbf{k}$$\cdot$$\mathbf{p}$ Hamiltonian in the vicinity of the $L$ point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.

cond-mat.mtrl-sci↗

arXiv2011

Silicon spin communication

Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.

cond-mat.mtrl-sci↗