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arXiv · 1108.4075

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

Sriram Krishnamoorthy·Pil Sung Park·Siddharth Rajan
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Abstract

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

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Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan. 2011-08-20. Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering. https://doi.org/10.1063/1.3666862

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