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arXiv · 1109.1486

The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Bilal Gokce·Daniel B. Dougherty·Kenan Gundogdu
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Abstract

Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds.

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Bilal Gokce, Daniel B. Dougherty, Kenan Gundogdu. 2011-09-07. The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation. https://arxiv.org/abs/1109.1486

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