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Daniel B. Dougherty

Publications and source records attributed to Daniel B. Dougherty.

5 recordsLinked to original sources

Modified Family-Vicsek Scaling and Probability Distributions for Brownian Castle Interfaces

The Brownian Castle is a new interface growth model that is a variation on the well-known ballistic deposition model that results in an entirely new universality class. We present numerical verification that the interface width for BC interfaces displays modified Family-Vicsek scaling properties up to finite size corrections. Specifically, we find a growth exponent of $\beta=0.470 \pm 0.012$ and a roughness exponent of $\alpha=1.01 \pm 0.018$. The scaling is modified at short times with a size scaling exponent that described the early time dependence of interface width on length. The probability distribution of heights for the BC interface shows significant deviations from simple Gaussian behavior and the probability distribution of height changes shows a Cauchy-Lorentz form consistent with expectations for a process involving relatively large jumps.

cond-mat.stat-mech

Mapping Interfacial Energetic Landscape in Organic Solar Cells Reveals Pathways to Reducing Nonradiative Losses

Bulk heterojunction (BHJ) organic solar cells have made remarkable inroads towards 20% efficiency, yet nonradiative recombination losses ({\Delta}Vnr) remain high compared to silicon and perovskite photovoltaics. Interfaces buried within BHJ blends hold the key to recombination losses but access to their energetic landscape underpinning charge transfer (CT) states and their disorder remain elusive. Here, we reveal the energetic landscape and CT state manifold of modern BHJs with both spatial and energetic resolutions and link the offset between singlet (ES1) and CT energy (ES1-CT) and interfacial energetic disorder with {\Delta}Vnr. We do so by locally mapping the energy distributions of modern PM6-based BHJs with IT4F, Y6 and PC71BM acceptors and combine it, for the first time, with sensitive EQE measurements, to visualize and quantify donor (D) and acceptor (A) energetics at interfaces and associated them with CT states within a modified Marcus framework. A key new ability is the identification of the specific BHJ interfaces associated with the CT manifold, including where the lowest energy CT states reside. Moreover, we quantify energy levels and electronic disorders directly at these and other interfaces and connect these contributions to the energy losses. We delineate the influences of S1-CT offset and interfacial energetic disorder on {\Delta}Vnr across morphologically varied BHJs. Our results show both factors influencing energy losses in different ways. We demonstrate that PM6:Y6 can achieve low {\Delta}Vnr by forming a nominally sharp D/A interface with exceptionally low interfacial disorder via judicious processing combined with a low S1 to CT offset. This provides a design rule to minimize {\Delta}Vnr for modern NFAs: sharp D/A interfaces with low S1 to CT offset exhibiting minimal interfacial disorder.

cond-mat.mtrl-sci

Ligand Field Exciton Annihilation in Bulk CrCl3

The layered van der Waals material CrCl3 exhibits very strongly bound ligand field excitons that control optoelectronic applications and are connected with magnetic ordering by virtue of their d-orbital origin. Time-resolved photoluminescence of these exciton populations at room temperature shows that their relaxation is dominated by exciton-exciton annihilation and that the spontaneous decay lifetime is very long. These observations allow the rough quantification of the exciton annihilation rate constant and contextualization in light of a recent theory of universal scaling behavior of the annihilation process.

cond-mat.mtrl-sci

Unexpected Structures for Intercalation of Sodium in Epitaxial Graphene-SiC Interfaces

We show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes the graphene. It intercalates in-between single-layer graphene and the carbon-rich interfacial layer. It also penetrates beneath the interfacial layer and decouples it to form a second graphene layer. This decoupling is accelerated by annealing and is verified by direct Na deposition onto the interface layer. Our observations show that intercalation in graphene is fundamentally different than in graphite and is a versatile means of electronic control.

cond-mat.mes-hall