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arXiv · 1109.2921

Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Xiaohui Tang·Nicolas Reckinger·Vincent Bayot·Christophe Krzeminski·Emmanuel Dubois·Alexandre Villaret·Daniel Bensahel
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Abstract

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.

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Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, Christophe Krzeminski, Emmanuel Dubois, Alexandre Villaret, Daniel Bensahel. 2011-09-13. Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices. https://doi.org/10.1109/tnano.2006.883481

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