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arXiv · 1109.2927

Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

Christophe Krzeminski·Emmanuel Dubois·Xiaohui Tang·Nicolas Reckinger·André Crahay·Vincent Bayot
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Abstract

Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

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Christophe Krzeminski, Emmanuel Dubois, Xiaohui Tang, Nicolas Reckinger, André Crahay, Vincent Bayot. 2012-10-04. Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device. https://arxiv.org/abs/1109.2927

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