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arXiv · 1109.5299

A heterojunction modulation-doped Mott transistor

Junwoo Son·Siddharth Rajan·Susanne Stemmer·S. James Allen
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Abstract

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain and current drive.

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Junwoo Son, Siddharth Rajan, Susanne Stemmer, S. James Allen. 2011-09-24. A heterojunction modulation-doped Mott transistor. https://doi.org/10.1063/1.3651612

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