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arXiv · 1111.4043

Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As

T. L. Linnik·A. V. Scherbakov·D. R. Yakovlev·X. Liu·J. K. Furdyna·M. Bayer
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Abstract

A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the equilibrium orientation of magnetization and subsequent magnetization precession. We derive a quantitative model of this effect using the Landau-Lifshitz equation for the magnetization that is precessing in the time-dependent effective magnetic field. After developing the general formalism, we then provide a numerical analysis for a certain structure and two typical experimental geometries in which an external magnetic field is applied either along the hard or the easy magnetization axis. As a result we identify three main factors, which determine the precession amplitude: the magnetocrystalline anisotropy of the ferromagnetic layer, its thickness, and the strain pulse parameters.

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T. L. Linnik, A. V. Scherbakov, D. R. Yakovlev, X. Liu, J. K. Furdyna, M. Bayer. 2011-11-17. Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As. https://doi.org/10.1103/physrevb.84.214432

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