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arXiv · 1111.4238

Dopant metrology in advanced FinFETs

G. P. Lansbergen·R. Rahman·G. C. Tettamanzi·J. Verduijn·L. C. L. Hollenberg·G. Klimeck·S. Rogge
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Abstract

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.

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G. P. Lansbergen, R. Rahman, G. C. Tettamanzi, J. Verduijn, L. C. L. Hollenberg, G. Klimeck, S. Rogge. 2011-11-17. Dopant metrology in advanced FinFETs. https://arxiv.org/abs/1111.4238

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