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arXiv · 1112.2169

Temperature Coefficient of Resistivity in Amorphous Semiconductors

Ming-Liang Zhang·David A. Drabold
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Abstract

By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous semiconductors, especially a-Si:H and a-Ge:H. The predicted TCR for n-doped a-Si:H and a-Ge:H is in agreement with experiments. The conductivity from the transitions from a localized state to an extended state (LE) is comparable to that from the transitions between two localized states (LL). This resolves a long-standing anomaly, a "kink" in the experimental $\log_{10}σ$ vs. T$^{-1}$ curve.

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Ming-Liang Zhang, David A. Drabold. 2011-12-12. Temperature Coefficient of Resistivity in Amorphous Semiconductors. https://arxiv.org/abs/1112.2169

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