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arXiv · 1201.1526

Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels

J. Khan·C. M. Nolen·D. Teweldebrhan·D. Wickramaratne·R. K. Lake·A. A. Balandin
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Abstract

We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.

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J. Khan, C. M. Nolen, D. Teweldebrhan, D. Wickramaratne, R. K. Lake, A. A. Balandin. 2012-01-07. Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels. https://doi.org/10.1063/1.3679679

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