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arXiv · 1201.3908

Insulating behavior in ultra-thin bismuth selenide field effect transistors

Sungjae Cho·Nicholas P. Butch·Johnpierre Paglione·Michael S. Fuhrer
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Abstract

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

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Sungjae Cho, Nicholas P. Butch, Johnpierre Paglione, Michael S. Fuhrer. 2012-01-18. Insulating behavior in ultra-thin bismuth selenide field effect transistors. https://doi.org/10.1021/nl200017f

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