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arXiv · 1202.5350

Thermal properties of charge noise sources

Martin V. Gustafsson·Arsalan Pourkabirian·Göran Johansson·John Clarke·Per Delsing
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Abstract

Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.

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Martin V. Gustafsson, Arsalan Pourkabirian, Göran Johansson, John Clarke, Per Delsing. 2012-02-24. Thermal properties of charge noise sources. https://doi.org/10.1103/physrevb.88.245410

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