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arXiv · 1203.1701

Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

Yosuke Harashima·Keith Slevin
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Abstract

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

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Yosuke Harashima, Keith Slevin. 2012-04-06. Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation. https://doi.org/10.1142/s2010194512005958

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