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arXiv · 1204.1144

Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II

I. L. Drichko·I. Yu. Smirnov·A. V. Suslov·O. A. Mironov·D. R. Leadley
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Abstract

The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the 0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landau levels coincide for angles $Θ$=0-70$^{\text{o}}$. Only for $Θ$ > 70$^{\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.

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I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, O. A. Mironov, D. R. Leadley. 2012-04-05. Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II. https://doi.org/10.1134/s1063776112080067

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